STL7DN6LF3: N-Channel Power MOSFET
The STL7DN6LF3 from STMicroelectronics is an N-channel power MOSFET designed for high-performance, low-power applications. It is commonly used in motor drives, automotive active suspension systems, and can also be used in other power control circuits, such as power management circuits, DC-DC converters, etc.
STL7DN6LF3 Introduction
Basic information
● Type: Dual N-channel power MOSFET.
● Technology: Using STripFET™ F3 technology.
Main parameters
● Drain-source voltage (Vdss): 60V.
● Continuous drain current (Id): 20A at 25°C under Tc conditions; 6.5A at 25°C under Tpcb conditions.
● On-resistance (Rds (on)): 35mΩ typical and 43mΩ maximum at VGS=10V, ID=3A; 48mΩ typical and 60mΩ maximum at VGS=5V, ID=3A.
● Gate threshold voltage (VGS (th)): minimum 1V, maximum 2.5V.
● Gate charge (Qg): maximum 8.7nC@10V.
● Input capacitance (Ciss): maximum 432pF@25V.
● Power dissipation (PTOT): 52W at 25°C under Tc conditions; 4.3W at 25°C under Tpcb conditions.
● Operating temperature (TJ): -55°C~175°C.
Features
● Automotive compliance: Designed for automotive applications, meets AEC-Q101 standards, with high reliability and stability, and can adapt to various complex conditions in the automotive environment.
● Logic level VGS (th): Easy to interface with logic circuits, and can easily achieve connection and control with other digital circuits.
● Good high temperature performance: The junction temperature of 175°C allows it to work in a higher temperature environment, and it is not easy to experience performance degradation or failure due to overheating.
● High avalanche rating: 100% avalanche rating, when subjected to avalanche energy impact, it can maintain stable performance and is not easy to be damaged, which improves reliability in high energy impact conditions.
● Wettable side package: Wettable side package technology makes welding more reliable, improves manufacturability and welding quality during circuit board assembly.
Application areas
● Motor drive: For example, in the EVALKIT-ROBOT-1 evaluation kit, it can be used as a three-phase brushless DC inverter power stage to drive brushless DC motors such as maxon EC-i 40 to achieve efficient motor control and drive.
● Automotive active suspension system: In the automotive active suspension system, it is used in conjunction with other chips such as L9945 to drive ecas stiffness valves, etc., to achieve precise control of the suspension system.
● Other power control circuits: It can also be applied to other circuits that require power switching and control, such as power management circuits, DC-DC converters, etc., to achieve precise control of current and voltage and improve circuit efficiency and performance.
Product comparison
STL7DN6LF3 Similar or Alternative
STL7DN6LF3 vs STD20NF06T4 vs STD20NF06LT4 vs AUIRF7640S2TR
Parameter | STL7DN6LF3 | STD20NF06T4 | STD20NF06LT4 | AUIRF7640S2TR |
---|---|---|---|---|
Imgae | ![]() | ![]() | ![]() | ![]() |
Manufacturer | STMicroelectronics | STMicroelectronics | STMicroelectronics | Infineon Technologies |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Package / Case | 8-PowerVDFN | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 | DirectFET™ Isometric SB |
Supplier Device Package | PowerFlat™ (5x6) | DPAK | DPAK | DIRECTFET SB |
Drain to Source Voltage ( Vdss) | 60V | 60 V | 60 V | 60 V |
Current - Continuous Drain ( Id) @ 25° C | 20A | 24A (Tc) | 24A (Tc) | 5.8A (Ta), 21A (Tc) |
Vgs(th) ( Max) @ Id | 3V @ 250µA | 4V @ 250µA | 2.5V @ 250µA | 5V @ 25µA |
Rds On ( Max) @ Id, Vgs | 43mOhm @ 3A, 10V | 40mOhm @ 12A, 10V | 40mOhm @ 12A, 10V | 36mOhm @ 13A, 10V |
Power - Max | 52W | 60W (Tc) | 60W (Tc) | 2.4W (Ta), 30W (Tc) |
Gate Charge ( Qg) ( Max) @ Vgs | 8.8nC @ 10V | 31 nC @ 10 V | 13 nC @ 10 V | 11 nC @ 10 V |
Operating Temperature | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) |
STL7DN6LF3 Datasheet PDF
STL7DN6LF3 FAQs
Q: What type of device is STL7DN6LF3?
A: STL7DN6LF3 is a dual N-channel power MOSFET launched by STMicroelectronics, using STripFET™ F3 technology.
Q: What is the main package of this device?
A: It uses PowerFLAT 5x6 package, which is compact, heat-dissipating and easy to surface mount.
Q: What is the drain-source voltage (Vdss) of STL7DN6LF3?
A: Its drain-source voltage (Vdss) is 60V.
Q: What factors affect the on-resistance (Rds (on)) and what is the typical value?
A: The on-resistance is affected by the gate-source voltage (VGS) and the drain current (ID). The typical value is 35mΩ when VGS = 10V, ID = 3A; the typical value is 48mΩ when VGS = 5V, ID = 3A.
Q: What is the gate threshold voltage (VGS (th)) range of this device?
A: The minimum gate threshold voltage is 1V and the maximum is 2.5V.
Q: What features of the STL7DN6LF3 make it suitable for automotive applications?
A: It meets the AEC-Q101 automotive standard, has a logic-level VGS (th) for easy interface with logic circuits, can operate at a junction temperature of 175°C, has a 100% avalanche rating and uses a wettable flank package, which ensures its reliability and stability in the complex environment of automobiles.
Q: What are the benefits of a wettable flank package?
A: Wettable side package technology can make welding more reliable, improve manufacturability and welding quality during circuit board assembly, and help detect welding defects in time.
Q: How is the reliability of the device guaranteed in high temperature environment?
A: It can withstand a junction temperature of 175°C. The PowerFLAT 5x6 package provides a good heat dissipation path to quickly dissipate the heat generated by the chip. At the same time, the chip's own design and manufacturing process ensure its stable performance at high temperatures.
Q: Are additional heat dissipation measures required?
A: Whether additional heat dissipation measures are required depends on the specific application scenario and working conditions. If used in high power, high frequency or high ambient temperature, additional heat sinks and other heat dissipation measures may be required to ensure that the chip operates within the appropriate temperature range.
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